Jpn. J. Appl. Phys. 48 (2009) 06FG06 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF: FREE (374K)|

Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy

Kojiro Tamaru1,2, Keiichiro Nonaka1,2, Masao Nagase1, Hiroshi Yamaguchi1, Shin'ichi Warisawa2, and Sunao Ishihara2

1NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan
2Department of Engineering Synthesis, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

(Received November 27, 2008; accepted February 16, 2009; published online June 22, 2009)

A method for evaluating the dynamic characteristics of micro- and nanoresonators with high spatial resolution is proposed. The mechanical resonance of circular micromembrane resonators is directly induced by voltage applied from the microprobe of a scanning probe microscopy (SPM) system. The vibration amplitude is simultaneously detected as height information by SPM. Experimentally, the resonant properties of fundamental and higher-order modes of 200-nm-thick GaAs micromembranes were measured. The frequency of the highest mode is 3.4 MHz and its resonant amplitude is about 1 nm. The resonant amplitude increases with increasing actuation voltage in a linear manner at voltages below 180 mV. Large actuation voltage induces nonlinear vibration with the spring soften effect, which originates from the strong attractive force induced by the electronic field between the probe and membrane. The high tapping force, which is repulsive, induces another type of nonlinear vibration caused by the spring harden effect. The simultaneous actuation and detection for mechanical resonators based on SPM technology reveals the characteristics of the mechanical interaction force between the micromembrane and microprobe.

URL: http://jjap.ipap.jp/link?JJAP/48/06FG06/
DOI: 10.1143/JJAP.48.06FG06


|Full Text PDF: FREE (374K)|  Citation:


References

  1. Y. T. Yang, C. Callegari, X. L. Feng, K. L. Ekinci, and M. L. Roukes: Nano Lett. 6 (2006) 583[CrossRef].
  2. B. Ilic, Y. Yang, K. Aubin, R. Reichenbach, S. Krylov, and H. G. Craighead: Nano Lett. 5 (2005) 925[CrossRef].
  3. D. Rugar, R. Budakian, H. J. Mamin, and B. W. Chui: Nature 430 (2004) 329[CrossRef].
  4. J. Yang, T. Ono, and M. Esashi: Sens. Actuators A 82 (2000) 102.
  5. V. Sazonova, Y. Yaish, H. Üstünel, D. Roundy, T. A. Arias, and P. L. McEuen: Nature 431 (2004) 284[CrossRef].
  6. A. N. Cleland, M. Pophristic, and I. Ferguson: Appl. Phys. Lett. 79 (2001) 2070[AIP Scitation].
  7. I. Mahboob and H. Yamaguchi: Nat. Nanotechnol. 3 (2008) 275.
  8. P. Poncharal, Z. L. Wang, D. Ugarte, and W. A. de Heer: Science 283 (1999) 1513[Science].
  9. J. Fujita, M. Ishida, T. Sakamoto, Y. Ochiai, T. Kaito, and S. Matsui: J. Vac. Sci. Technol. B 19 (2001) 2834[AIP Scitation].
  10. B. Ilic, S. Krylov, L. M. Bellan, and H. G. Craighead: J. Appl. Phys. 101 (2007) 044308[AIP Scitation].
  11. A. Volodin, D. Buntinx, M. Ahlskog, A. Fonseca, J. B. Nagy, and C. V. Haesendonck: Nano Lett. 4 (2004) 1775[CrossRef].
  12. D. Garcia-Sanchez, A. San Paulo, M. J. Esplandiu, F. Perez-Murano, L. Forró, A. Aguasca, and A. Bachtold: Phys. Rev. Lett. 99 (2007) 085501[APS].
  13. K. M. Cheng, Z. Weng, D. R. Oliver, D. J. Thomson, and G. E. Bridges: J. Microelectromech. Syst. 16 (2007) 1054.
  14. A. San Paulo, J. P. Black, R. M. White, and J. Bokor: Appl. Phys. Lett. 91 (2007) 053116[AIP Scitation].
  15. E. Hong, S. Trolier-McKinstry, R. Smith, S. V. Krishnaswamy, and C. B. Freidhoff: IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53 (2006) 697.
  16. S. Belaidi, P. Girard, and G. Leveque: J. Appl. Phys. 81 (1997) 1023[AIP Scitation].
  17. B. Lee, S. S. Bose, M. H. Kim, A. D. Reed, G. E. Stillman, W. I. Wang, L. Vina, and P. C. Colter: J. Cryst. Growth 96 (1989) 27[CrossRef].
  18. M. D. Pashley, K. W. Haberern, R. M. Feenstra, and P. D. Kirchner: Phys. Rev. B 48 (1993) 4612[APS].
  19. V. Kaajakari, T. Mattila, A. Oja, and H. Seppä: J. Microelectromech. Syst. 13 (2004) 715.
  20. M. Palaniapan and L. Khine: Sens. Actuators A 142 (2008) 203.
  21. L. Nony, R. Boisgard, and J. P. Aimé: J. Chem. Phys. 111 (1999) 1615[AIP Scitation].
  22. C. Su, L. Huang, and K. Kjoller: Ultramicroscopy 100 (2004) 233.
  23. M. A. Lantz, S. J. O'Shea, and M. E. Welland: Phys. Rev. B 56 (1997) 15345[APS].
  24. H. Yamaguchi, K. Kato, Y. Nakai, K. Onomitsu, S. Warisawa, and S. Ishihara: Appl. Phys. Lett. 92 (2008) 251913[AIP Scitation].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2010 The Japan Society of Applied Physics
Contact Information