Jpn. J. Appl. Phys. 48 (2009) 070204 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

Georges Elias, Antoine Létoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, Nicolas Chevalier, Karine Tavernier, Alain Le Corre, Nicolas Bertru, and Slimane Loualiche

(Received March 6, 2009; accepted March 31, 2009; published online July 6, 2009)

InAs quantum dot (QD) formation on InP(001) has been investigated by gas source molecular beam epitaxy as a function of the substrate misorientation, arsenic pressure and temperature. A large improvement on quantum dot shape and density was obtained thanks to the use of substrates misoriented toward the [110] direction and low arsine flow rate. Round-shaped small QDs (diameter: 26 nm) in high density (9×10¹⁰ QDs/cm²) have been achieved using optimized growth conditions. Room temperature laser emission around 1.55 µm from was obtained with a threshold current density of 1 kA/cm² for 1 mm long cavity.

URL: http://jjap.ipap.jp/link?JJAP/48/070204/
DOI: 10.1143/JJAP.48.070204

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