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Jpn. J. Appl. Phys. 48 (2009) 071202 (12 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory

Kunihiro Suzuki, Yoko Tada, Tsukasa Itani, Yuji Kataoka, Shuichi Kojima1, Tsutomu Nagayama2, and Susumu Nagayama3

Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
1Fujitsu LSI Technology, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
2Nissin Ion Equipment Co., Ltd., 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto 601-8205, Japan
3Nano Science Corporation, 7F Sumitomo Bldg., 1-10-1 Higashi Ikebukuro, Toshima, Tokyo 170-0013, Japan

(Received December 26, 2008; revised April 7, 2009; accepted April 14, 2009; published online July 21, 2009)

We propose an analytical model for ion implantation profiles in a Si1-xGex substrate with various content ratios x. The moments associated with the peak region were evaluated using the extended Lindhard–Scharff–Schiott (LSS) theory. The channeling length was related to the maximum range associated with electron stopping power only. We also express the shape of the channeling tail and the channeling dose empirically but with a universal form. We showed that the theory reproduces the experimental data well. Since the theory simultaneously gives information on the lateral distribution, we established a database of B, P, and As ion implantation profiles including their lateral distribution profiles in Si1-xGex substrates.

URL: http://jjap.ipap.jp/link?JJAP/48/071202/
DOI: 10.1143/JJAP.48.071202


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