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Jpn. J. Appl. Phys. 48 (2009) 101202 (4 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting

Diefeng Gu1,2, Helmut Baumgart1,2, Konstantin K. Bourdelle3, George K. Celler3, and A. A. Elmustafa2,4

1Electrical Engineering, Old Dominion University, Norfolk, VA 23529, U.S.A.
2The Applied Research Center-ODU-Jefferson Lab, Newport News, VA 23606, U.S.A.
3SOITEC, Parc Technologique des Fontaines, Bernin 38926 Crolles Cedex, France
4Mechanical Engineering, Old Dominion University, Norfolk, VA 23529, U.S.A.

(Received May 22, 2009; accepted August 13, 2009; published online October 20, 2009)

We studied the effect of hydrogen implantation into Si and the nanomechanical response to defect interaction, which is responsible for wafer splitting during the Smart CutTM layer transfer of (001) oriented Si wafers. Hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness and elastic modulus of the single crystalline Si lattice in the H implantation-induced damage zone following annealing was observed. Cross-sectional transmission electron microscopy revealed that the majority of extended defects consist of platelets, which developed parallel to the (001) Si surface during annealing.

URL: http://jjap.ipap.jp/link?JJAP/48/101202/
DOI: 10.1143/JJAP.48.101202


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