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Jpn. J. Appl. Phys. 48 (2009) 101601 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application

Yanbo Liu1,2, Ting Zhang2 , Guoxin Zhang3, Xiaoming Niu1, Zhitang Song2, Guoquan Min1, Yun Lin2, Jing Zhang1, Weimin Zhou1, Jianping Zhang1, Jiangtao Chu1, YongZhong Wan1, and Songlin Feng2

1Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
2State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
3Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China

(Received January 3, 2009; accepted May 10, 2009; published online October 20, 2009)

The adhesive strength between a phase change film and electrodes is important for the application of phase change random access memory. The adhesive strength between Ge2Sb2Te5 and various types of electrodes as a function of annealing temperature was investigated using Nano Indenter®. The structural transformation of Ge2Sb2Te5 during annealing was studied by X-ray diffraction. Results show that adhesive strength decreases with an increase in annealing temperature. The adhesive strength between amorphous Ge2Sb2Te5 and electrodes is higher than that between polycrystalline Ge2Sb2Te5 and electrodes, and TiN is a better choice as a heating electrode in the phase change memory application than W and Ti.

URL: http://jjap.ipap.jp/link?JJAP/48/101601/
DOI: 10.1143/JJAP.48.101601


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References

  1. M. Wuttig and N. Yamada: Nat. Mater. 6 (2007) 824.
  2. T. Zhang, Z. T. Song, F. Rao, G. M. Feng, B. Liu, S. L. Feng, and B. Chen: Jpn. J. Appl. Phys. 46 (2007) L602[IPAP].
  3. Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, and T. Koga: IEDM Tech. Dig., 2006, p. 523.
  4. T. P. Leevard Pederson, J. Kalb, W. K. Njoroge, D. Wamwangi, M. Wuttig, and F. Spaepen: Appl. Phys. Lett. 79 (2001) 3597[AIP Scitation].
  5. W. K. Njoroge, H. W. Woltgens, and M. Wuttig: J. Vac. Sci. Technol. A 20 (2002) 230[AIP Scitation].
  6. C. Charitidis, Y. Panayiotatos, and S. Logothetidis: Diamond Relat. Mater. 12 (2003) 1088.
  7. L. Y. Huang, K. W. Xu, and J. Lu: Diamond Relat. Mater. 11 (2002) 1505.
  8. A. Karimi, Y. Wang, T. Cselle, and M. Morstein: Thin Solid Films 420–421 (2002) 275[CrossRef].
  9. G. Wei, T. W. Scharf, J. N. Zhou, F. Huang, M. L. Weaver, and J. A. Barnard: Surf. Coat. Technol. 146–147 (2001) 357.
  10. S. W. Youn and C. G. Kang: Mater. Sci. Eng. A 384 (2004) 275.
  11. B. Bhushan: Handbook of Micro/Nanotribology (CRC, Boca Raton, FL, 1999) 2nd ed.
  12. I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, and M. Wuttig: J. Appl. Phys. 87 (2000) 4130[AIP Scitation].
  13. C. Cabral, Jr., K. N. Chen, L. Krusin-Elbaum, and V. Deline: Appl. Phys. Lett. 90 (2007) 051908[AIP Scitation].
  14. H. Ipser and R. Krachler: Z. Metallkd. 84 (1993) 613.
  15. L. Krusin-Elbaum, C. Cabral, K. N. Chen, M. Copel, D. W. Abraham, K. B. Reuter, S. M. Rossngel, J. Bruley, and V. R. Deline: Appl. Phys. Lett. 90 (2007) 141902[AIP Scitation].
  16. T. Zhang, Z. T. Song, Y. F. Gong, Y. Lin, C. Xu, Y. F. Chen, B. Liu, and S. L. Feng: Appl. Phys. Lett. 92 (2008) 113503[AIP Scitation].
  17. J. F. Shackelford, W. Alexander, and J. S. Park: CRC Material Science and Engineering Handbook (CRC, Boca Raton, FL, 1994) 2nd ed.
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