Jpn. J. Appl. Phys. 48 (2009) 126502 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (450K)| |Buy This Article|

Kinematical Modeling of Pad Profile Variation during Conditioning in Chemical Mechanical Polishing

Sangjik Lee, Sukhoon Jeong, Kihyun Park, Hyoungjae Kim1, and Haedo Jeong2

Department of Precision and Mechanical Engineering, Pusan National Univeristy, Jangjeon-dong, Geumjeong-gu, Busan 609-735, Korea
1Dongnam Technology Service Division, Transportation and Machinery Components Technology Service Center, Korea Institute of Industrial Technology, Jisa-dong, Gangseo-gu, Busan 618-230, Korea
2School of Mechanical Engineering, Pusan National University, Jangjeon-dong, Geumjeong-gu, Busan 609-735, Korea

(Received March 3, 2009; accepted September 7, 2009; published online December 21, 2009)

Conditioning is the process of removing the glazing area from a polishing pad surface and restoring the quality of the surface to maintain a stable polishing performance. However, the conditioning process can induce a non-uniform profile variation of the pad, which can result in nonuniform material removal rates across the wafer. In this paper, a kinematical model based on Preston's equation is proposed to examine the pad profile variation (PPV) induced by swing arm conditioning with a diamond disk. The proposed model was simulated with various swing arm velocity profiles (SAVPs), and the results were compared with experimental results. The results showed the relationship between kinematical parameters and the PPV. The PPV was proportional to sliding distance based on the kinematical model, and then the sliding distance distribution across the pad was dependent on the SAVP. This study has proven the effectiveness of the kinematical model on the PPV during conditioning in chemical mechanical polishing (CMP).

URL: http://jjap.ipap.jp/link?JJAP/48/126502/
DOI: 10.1143/JJAP.48.126502


|Full Text PDF (450K)| |Buy This Article| Citation:

References

  1. A. S. Lawing: Mater. Res. Soc. Symp. Proc. 732E (2002) I5.3.1.
  2. K. H. Park, H. J. Kim, O. M. Chang, and H. D. Jeong: J. Mater. Process. Technol. 187–188 (2007) 73.
  3. B. J. Hooper, G. Byrne, and S. Galligan: J. Mater. Process. Technol. 123 (2002) 107.
  4. T. Bibby and K. Holland: in Semiconductors and Materials, ed. S. H. Li and R. O. Miller (Academic Press, New York, 1999) Vol. 63, Chap. 2, p. 85.
  5. T. Tucker: in Materials Science, ed. M. R. Oliver (Springer, New York, 2004) Vol. 69, Chap. 5, p. 155.
  6. Y. Y. Zhou and E. C. Davis: Mater. Sci. Eng. B 68 (1999) 91.
  7. K. Achuthan, J. Curry, M. Lacy, D. Campbell, and S. V. Babu: J. Electron. Mater. 25 (1996) 1628.
  8. F. W. Preston: J. Soc. Glass Technol. 11 (1927) 214.
  9. H. Kim and H. Jeong: J. Electron. Mater. 33 (2004) 53.
  10. O. Chang, H. Kim, K. Park, B. Park, H. Seo, and H. Jeong: Microelectron. Eng. 84 (2007) 577.
  11. E. Uhlmann: in Handbook of Lapping and Polishing, ed. I. D. Marinescu, E. Uhlmann, and T. K. Doi (CRC Press, Boca Raton, FL, 2006) Chap. 2, p. 35.
  12. The Planarization and CMP Technical Committee and NSF/SRC Engineering Center for Environmentally Benign Semiconductor Manufacturing: Planarization Technical Term Dictionary (Global Net Corp., Tokyo, 2004) p. 248.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2010 The Japan Society of Applied Physics
Contact Information