Jpn. J. Appl. Phys. 49 (2010) 017101 (6 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Removal of Fluorinated Compound Gases by an Enhanced Methane Microwave Plasma Burner

Yongcheol Hong, Taihyeop Lho, Donghun Shin, and Han Sup Uhm1

Applied Technology Research Division, National Fusion Research Institute, 52 Eoun-dong, Yuseong-gu, Daejeon 305-333, Korea
1Department of Molecular Science and Technology, Ajou University, San 5, Woncheon-dong, Youngtong-gu, Suwon 443-749, Korea

(Received August 27, 2009; accepted November 4, 2009; published online January 20, 2010)

Removal of fluorinated compound (FC) gases was experimentally investigated for various gas mixture constituents by making use of an enhanced methane microwave plasma burner. Methane (CH4) as a fuel was injected into the microwave plasma torch for generating an enlarged high-temperature plasma flame. A mixture of nitrogen and FC gases was introduced into the burner flame. Abatement experiments of FC gases were carried out in terms of destruction and removal efficiency (DRE). The plasma burner generated at 1.4 kW microwave power and 15 liters per minute (lpm) CH4 achieved DREs>99.9% for NF3 in 400 lpm nitrogen and SF6 in 120 lpm nitrogen. Also, the plasma burner removed 94.7% of CF4 concentration in 60 lpm nitrogen. Eventually, the experimental results showed that the microwave plasma burner can significantly eliminate FCs from the semiconductor industries.

URL: http://jjap.ipap.jp/link?JJAP/49/017101/
DOI: 10.1143/JJAP.49.017101


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References

  1. J. Reilly, R. Prinn, J. Harnisch, J. Fitzmaurice, H. Jacoby, D. Kicklighter, J. Melillo, P. Stone, A. Sokolov, and C. Wang: Nature 401 (1999) 549[CrossRef].
  2. T. Gierczak, R. Talukdar, G. L. Vaghijiani, E. R. Lovejoy, and A. R. Ravishankara: J. Geophys. Res. 96 (1991) 5001.
  3. J. J. Orlando, J. B. Burkholder, S. A. McKeen, and A. R. Ravishankara: J. Geophys. Res. 96 (1991) 5013.
  4. Y. C. Hong and H. S. Uhm: Phys. Plasmas 10 (2003) 3410.
  5. H. S. Uhm, S. C. Cho, I. G. Park, and M. S. Hong: J. Korean Phys. Soc. 52 (2008) 1800.
  6. L. Beu and P. T. Brown: Electrochem. Soc. Proc. 99-8 (1999) 1.
  7. D. T. Chen, M. M. David, G. V. D. Tiers, and J. N. Schroepfer: Environ. Sci. Technol. 32 (1998) 3237.
  8. C. L. Hartz and J. W. Bevan: Environ. Sci. Technol. 32 (1998) 682.
  9. B. A. Wofford and M. W. Jackson: Environ. Sci. Technol. 33 (1999) 1892.
  10. V. Mohindra, H. Chae, H. H. Sawin, and M. T. Mocella: IEEE Trans. Semicond. Manuf. 10 (1997) 399.
  11. T. Kuroki, J. Mine, S. Odahara, M. Okubo, T. Yamamoto, and N. Saeki: IEEE Trans. Ind. Appl. 41 (2005) 221.
  12. A. Fiala, M. Kiehlbauch, S. Mahnovski, and D. B. Graves: J. Appl. Phys. 86 (1999) 152[AIP Scitation].
  13. X. P. Xu, S. Rauf, and M. J. Kushner: J. Vac. Sci. Technol. A 18 (2000) 213[AIP Scitation].
  14. A. Huang, G. Xia, F. J. Spiess, X. Chen, J. Rozak, S. L. Suib, T. Takahashi, Y. Hayashi, and H. Matsumoto: Res. Chem. Intermed. 27 (2001) 957.
  15. M. B. Chang and S. J. Yu: Environ. Sci. Technol. 35 (2001) 1587.
  16. Y. Kabouzi, M. Moisan, J. C. Rostaing, C. Trassy, D. Guérin, D. Kéroack, and Z. Zakrzewski: J. Appl. Phys. 93 (2003) 9483[AIP Scitation].
  17. M. T. Radoiu: Environ. Sci. Technol. 37 (2003) 3985.
  18. Y. C. Hong, H. S. Uhm, B. J. Chun, S. K. Lee, S. K. Hwang, and D. S. Kim: Phys. Plasmas 13 (2006) 033508.
  19. Y. C. Hong, J. H. Kim, and H. S. Uhm: Phys. Plasmas 11 (2004) 830.
  20. Y. C. Hong, D. H. Shin, and H. S. Uhm: Appl. Phys. Lett. 91 (2007) 161502[AIP Scitation].
  21. Y. C. Hong and H. S. Uhm: Phys. Plasmas 12 (2005) 053504.
  22. Y. C. Hong, S. C. Cho, and H. S. Uhm: J. Korean Phys. Soc. 53 (2008) 3220.
  23. D. L. Baulch, R. A. Cox, R. F. Hampson, Jr., and J. A. Kerr: J. Phys. Chem. Ref. Data 9 (1980) 295.
  24. Y. C. Hong, S. C. Cho, C. U. Bang, D. H. Shin, J. H. Kim, H. S. Uhm, and W. J. Yi: Appl. Phys. Lett. 88 (2006) 201502[AIP Scitation].
  25. H. S. Uhm and S. H. Hong: Combust. Sci. Technol. 152 (2000) 147.
  26. K. E. Greenberg and J. T. L. Verdeyen: J. Appl. Phys. 57 (1985) 1596[AIP Scitation].
  27. J. S. Chang, K. G. Kostov, K. Urashima, T. Yamamoto, Y. Okayasu, T. Kato, T. Iwaizumi, and K. Yoshimura: IEEE Trans. Ind. Appl. 36 (2000) 1251.
  28. J. Kikuchi, M. Iga, H. Ogawa, S. Fujimura, and H. Yano: Jpn. J. Appl. Phys. 33 (1994) 2207[IPAP].
  29. Y. R. Jang, K.-H. Yoo, and S. M. Park: J. Korean Phys. Soc. 53 (2008) 110.
  30. C. J. Ultee: Chem. Phys. Lett. 46 (1977) 366[CrossRef].
  31. K. R. Ryan and I. C. Plumb: Plasma Chem. Plasma Process. 8 (1988) 281.
  32. J. T. Herron: Int. J. Chem. Kinet. 19 (1987) 129.
  33. J. Warnatz: in Rate Coefficients in the C/H/O System Combustion Chemistry, ed. W. C. Gardiner, Jr. (Springer, New York, 1884) p. 197.
  34. R. A. Bonham: Jpn. J. Appl. Phys. 33 (1994) 4157[IPAP].
  35. M. Miletić, O. Nešković, M. Veljković, and K. F. Zmbov: Rapid Commun. Mass Spectrom. 12 (1998) 753.
  36. I. C. Plumb and K. R. Ryan: Plasma Chem. Plasma Process. 6 (1986) 247.
  37. H. S. Uhm: Phys. Plasmas 6 (1999) 4366.
  38. W. Tsang and R. F. Hampson: J. Phys. Chem. Ref. Data 15 (1986) 1087.
  39. Y. C. Hong and H. S. Uhm: Phys. Plasmas 13 (2006) 113501.

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