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Jpn. J. Appl. Phys. 8 (1969) pp. 1020-1026  |Next Article|  |Table of Contents|
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The 1/f Noise MOS Transistors

Toshio Tanaka, Katsuto Nagano and Naohiro Nameki

Department of Electrical and Electronic Engineering Faculty of Science and Technology, Sophia University

(Received February 5, 1969)

The low-frequency noise characteristics of MOS transistors with SiO2 films formed by reactive sputtering as gate insulators were investigated. An attempt is made to analyze the characteristics on the basis of the tunneling model. Reasonable agreement of the experimental result with the theorectical characteristics is found. Some informations on the noise generation centers are obtained.

URL: http://jjap.ipap.jp/link?JJAP/8/1020/
DOI: 10.1143/JJAP.8.1020


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References

  1. A. G. Jordan and N. A. Jordan: IEEE Trans. Electron Devices ED-12 (1965) 148.
  2. C. T. Sah and F. H. Hielscher: Phys. Rev. Lett. 17 (1966) 956[APS].
  3. I. Flinn, G. Bew and F. Berz: Solid-State Electron. 10 (1967) 833[Elsevier].
  4. S. T. Hsu, D. J. Fitzgerald and A. S. Grove: Appl. Phys. Lett. 12 (1968) 287[AIP Scitation].
  5. E. A. Leventhal: Solid-State Electron. 11 (1968) 621[Elsevier].
  6. E. H. Nicollian and H. Melchior: Bell System Tech. J. 46 (1967) 2019.
  7. G. Abowitz, E. Arnold and E. A. Leventhal: IEEE Trans. Electron Devices ED-14 (1967) 2019.
  8. O. Jäntsch: Solid-State Electron. 11 (1968) 267[Elsevier].
  9. K. Lehovec and A. Slobodskoy: Solid-State Electron. 7 (1964) 59[Elsevier].
  10. A. L. McWhorter: Semiconductor Surface Physics ed. R. H. Kingston (University of Pennsylvania Press, 1956) p. 207.
  11. K. Nagano and T. Tanaka: To be published.
  12. S. Iwauchi and T. Tanaka: Jpn. J. Appl. Phys. 7 (1968) 1193[IPAP].
  13. Van der Ziel: Fluctuation Phenomena in Semiconductors (London Butterworths Scientific Publications, 1959) p. 15.
  14. T. Tanaka and S. Iwauchi: Jpn. J. Appl. Phys. 7 (1968) 1473[IPAP].
  15. F. P. Heiman and G. Warfield: IEEE Trans. Electron Devices ED-12 (1965) 167.
  16. S. R. Hofstein and G. Warfield: IEEE Trans. Electron Devices ED-12 (1965) 129.
  17. A. C. Prior: Phys. Chem. Solids 12 (1959) 129.
  18. S. R. Hofstein: Solid-State Electron. 10 (1967) 657[Elsevier].
  19. C. Y. Duh and J. L. Moll: IEEE Trans. Electron Devices ED-14 (1967) 46.
  20. H. C. Pao and C. T. Sah: Solid-State Electron. 9 (1966) 927[CrossRef].
  21. S. Christensson, I. Lundström and C. Svensson: Solid-State Electron. 11 (1968) 797[Elsevier].
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